Verbundsubstrat für Akustische Oberflächenwellenanordnungen
Anmelder: SHIN-ETSU CHEMICAL CO., LTD. 🇯🇵
Details
- Veröffentlichungs-Nr.
- EP4712346
- Anmeldetag
- 1. April 2024
- Veröffentlichung
- 14. November 2024
- Rechtsraum
- EP
- IPC
- H03H9/25, H10N30/853
Abstract
Provided is a composite substrate for surface acoustic wave devices, the composite substrate including a piezoelectric single crystal thin film, a support substrate, and at least one intervening layer that is provided between the piezoelectric single crystal thin film and the support substrate, the intervening layer being in contact with the piezoelectric single crystal thin film, the total thickness of the intervening layer being equal to or less than twice the wavelength of the surface acoustic wave, and the attenuation of a longitudinal wave of the intervening layer as calculated by a Brillouin oscillation method at a frequency of 40 GHz to 60 GHz being 8 × 10<sup>-2</sup> (nm<sup>-1</sup> · THz<sup>-2</sup>) or less. According to the present invention, it is possible to provide a composite substrate for surface acoustic wave devices, which has a small loss in the pass band of a filter, few spurious components, and excellent high performance and high reliability.
Anmelder
- Firma
- SHIN-ETSU CHEMICAL CO., LTD.
- Land
- 🇯🇵 Japan
Japanisches Chemieunternehmen mit Sitz in Tokio. Shin-Etsu Chemical stellt Siliziumwafer für Halbleiter, Silikonprodukte, PVC und weitere Spezialchemikalien für Elektronik-, Bau- und Industrieanwendungen her.
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