Verfahren zur Herstellung einer Halbleiterstruktur

Details

Veröffentlichungs-Nr.

EP4712729

Anmeldetag

13. September 2024

Veröffentlichung

18. März 2026

Rechtsraum

EP

Abstract

The present invention provides a method for forming a semiconductor structure (100), the method comprising: forming a fin (103) comprising a layer stack (110) on a substrate (102), the layer stack (110) comprising: a first sub-stack (120) comprising: at least one channel layer (122) at least one sacrificial layer (124) a dielectric layer (132) on top of the first sub-stack (120) depositing a dummy gate oxide (142) straddling the fin (103), the dummy gate oxide (142) extending over the dielectric layer (132) of the fin (103), forming a dummy gate (150) on top of the dummy gate oxide (142), the dummy gate (150) straddling the fin (103).

Anmelder

Firma

Imec VZW

Land

🇧🇪 Belgien