Esd-Schutz mit Niedrigem Leckstrom

Details

Veröffentlichungs-Nr.

EP4712731

Anmeldetag

12. September 2025

Veröffentlichung

18. März 2026

Rechtsraum

EP

IPC

H10D89/60, H02H9/04

Abstract

The present disclosure relates to electrostatic discharge (ESD) protection circuitry of an electronic device, which is capable of protecting thin-oxide metal-oxide-semiconductor (MOS) transistors within the electronic device during an ESD event and/or a power-on transient stage without large current leakage. The disclosed ESD protection circuitry at least includes a protection switch and a switch controller. The protection switch is coupled between an external pin of the electronic device and internal circuitry of the electronic device, which is composed of thin-oxide MOS transistors. The switch controller is configured to control the protection switch to be conducting or non-conducting based on both a status of a first voltage supply powering the ESD protection block and a presence of an ESD event at the external pin, such that the external pin is electrically connected to or disconnected from the internal circuitry.

Anmelder

Firma

QORVO US, INC.

Land

🇺🇸 USA

Fachgebiete