Leseverstärker, Steuerverfahren Dafür, Speicherarraystruktur und Speicher

Details

Veröffentlichungs-Nr.

EP4715820

Anmeldetag

26. März 2024

Veröffentlichung

8. Mai 2025

Rechtsraum

EP

IPC

G11C11/4091

Abstract

The embodiments of the present disclosure relate to the technical field of storage, and provide a sense amplifier, a control method therefor, a storage array structure, and a memory. The sense amplifier comprises: a first signal amplification unit, wherein a first end and a second end of the first signal amplification unit are respectively adapted to be electrically connected to a first voltage end and a second voltage end, and a third end and a fourth end of the first signal amplification unit are respectively used as a first node and a second node; and a second signal amplification unit, wherein a first end, a second end and a third end of the second signal amplification unit are respectively adapted to be electrically connected to a third voltage end, a fourth voltage end and a bit line, and a fourth end of the second signal amplification unit is electrically connected to the first node. The sense amplifier is configured to amplify the voltage of the first node to a first voltage or a second voltage in a first signal amplification stage; and to write the second voltage or the first voltage back to a storage unit in a second signal amplification stage. The structure of the sense amplifier in the embodiments of the present disclosure can replace an edge reference array, and no additional reference array needs to be provided, thereby reducing the size of chips and reducing the chip cost.

Anmelder

Firma

Beijing Superstring Academy of Memory Technology

Land

🇨🇳 China

Fachgebiete