Verfahren zur Herstellung eines Memristor-Systems für eine Neuromorphe Vorrichtung

Details

Veröffentlichungs-Nr.

EP4716401

Anmeldetag

23. September 2024

Veröffentlichung

25. März 2026

Rechtsraum

EP

IPC

H10B63/00, H10N70/20

Abstract

The invention provides a method for manufacturing a memristor system for a neuromorphic device, including: -providing a first substrate; -depositing an epitaxial buffer layer on the first substrate; -epitaxially depositing at least one memristor device layer, in particular a semiconductor oxide layer, on the buffer layer; -removing the buffer layer, in particular by dissolving and/or etching the buffer layer, to provide a freestanding memristor device layer; -manufacturing a memristor device cell structure in/from the memristor device layer; -providing a second substrate; - forming a first electrode structure on the second substrate; -joining the freestanding memristor device layer onto the first electrode structure of the second substrate; and -forming a second electrode structure on the memristor device cell structure.

Anmelder

Firma

RIJKSUNIVERSITEIT GRONINGEN

Land

🇳🇱 Niederlande

Fachgebiete