Halbleitervorrichtung und Datenspeichersystem damit

Details

Veröffentlichungs-Nr.

EP4716402

Anmeldetag

16. September 2025

Veröffentlichung

25. März 2026

Rechtsraum

EP

IPC

H10D1/20, H10B43/40

Abstract

A semiconductor device and a data storage system including the same are provided. The semiconductor device (CH) includes: a lower structure (LS); and an upper structure (US) on the lower structure, wherein the upper structure comprises a first lower conductive pattern (204a); a second lower conductive pattern (204b), provided at a same level; a lower insulating structure (210) on the lower structure and on side surfaces of the first and second lower conductive patterns, having an upper surface at a level farther from the lower structure than that of the first and second lower conductive patterns; an upper conductive pattern (215) comprising a first portion (215b, 215c) on an upper surface of the lower insulating structure, a second portion (215a) extending from the first portion and contacting the upper surface of the first lower conductive pattern exposed by a first opening in the lower insulating structure, wherein at least a portion of the first portion of the upper conductive pattern has a spiral coil shape in a plan view.

Anmelder

Firma

SAMSUNG ELECTRONICS CO., LTD.

Land

🇰🇷 Südkorea