Verfahren zur Herstellung eines Rückseitigen Source/drain-Kontaktes

Details

Veröffentlichungs-Nr.

EP4716404

Anmeldetag

24. September 2024

Veröffentlichung

25. März 2026

Rechtsraum

EP

Abstract

According to an aspect of the present inventive concept there is provided a method for forming a source/drain contact, the method comprising: providing at least one fin (110) on top of a substrate (130), the at least one fin (110) comprising at least a first set of channel layers (111), the at least one fin (110) being arranged between a first and second shallow trench isolation, STI, region (151, 152) extending into the substrate (130); from a frontside (134) of the substrate (130): forming a cavity (136) in the substrate (130) proximate to the at least one fin (110), forming a sacrificial plug (160) in the cavity (136), and forming a source/drain region (170) on top of the sacrificial plug (160), and in contact with the first set of channel layers (111) of the at least one fin (110); and from a backside (135) of the substrate (130): removing a first region (138) of the substrate (130), the first region (138) of the substrate (130) being a region between the first and second STI region (151, 152) and around the sacrificial plug (160), forming a dielectric material (180) between the first and second STI region (151, 152) and around the sacrificial plug (160), and replacing the sacrificial plug (160) with a metal (190) such that the metal (190) is in electrical contact with the source/drain region (170), wherein a bottom level of the cavity (136) is substantially equal to a bottom level of the first and second STI region (151, 152).

Anmelder

Firma

Imec VZW

Land

🇧🇪 Belgien