Schutzschaltung, Zugehöriges System und Verfahren

Details

Veröffentlichungs-Nr.

EP4718723

Anmeldetag

17. September 2025

Veröffentlichung

1. April 2026

Rechtsraum

EP

IPC

H03K17/082, // H03K17/08

Abstract

A circuit (50; 50'; 55) for protection of a power transistor (14), in particular a power MOSFET, coupled at a first electrode to a battery power supply (15) and to another electrode to a load (18), and driven at a driving electrode by a driver circuit (13), whereinsaid circuit for protection (50; 50'; 55) comprises Safe Operating Area monitoring circuitry (60; 60'; 70) configured to control the transistor (14) operation with respect to its Safe Operating Area (PMS), which receives as input at least a current value (I_sense) proportional to a current (ID) flowing through said power transistor (14),said Safe Operating Area monitoring circuitry (60; 60'; 70) being configured to control the operation of the power transistor (14) with respect to said Safe Operating Area (PMS) as a function of transistor thermal behaviour information (PMS, SSI; 100) and said at least a current value proportional to a current (ID) flowing through said power transistor (14) to control the value of a junction temperature (Tj) of the transistor (14), outputting an output signal (OUT; OUT1) which value controls on and off states of said driver circuit (13) by a switch (23) driving of the power transistor to obtain a given behaviour in time of the junction temperature (Tj) of the transistor (14) within said Safe Operation Area.

Anmelder

Firma

STMicroelectronics International N.V.

Land

🇨🇭 Schweiz