Kryo-Cmos-Schaltungen mit Niedriger Leistungsaufnahme und Nichtflüchtiger Schwellenspannungsoffsetkompensation

Details

Veröffentlichungs-Nr.

EP4718729

Anmeldetag

1. Juni 2021

Veröffentlichung

1. April 2026

Rechtsraum

EP

Abstract

Systems and methods related to low power cryo-CMOS circuits with non-volatile threshold voltage offset compensation are provided. A system (400) for interfacing with qubit gates comprises a first plurality of devices (420) configured to operate in a cryogenic environment; a second plurality of devices (430), different from the first plurality of devices (420), configured to operate in the cryogenic environment; and control logic (450). The control logic (450) is coupled to each of the first plurality of devices (420) and the second plurality of devices (430), and is configured to modify a threshold voltage associated with each of the first plurality of devices (420) and the second plurality of devices (430) such that a first threshold voltage associated with each of the first plurality of devices (420) is different from a second threshold voltage associated with each of the second plurality of devices (430).

Anmelder

Firma

Microsoft Technology Licensing, LLC

Land

🇺🇸 USA