Zenerdiode mit Verbesserter Spannungsimmunität unter Verwendung eines Polynetzes

Details

Veröffentlichungs-Nr.

EP4718975

Anmeldetag

26. September 2025

Veröffentlichung

1. April 2026

Rechtsraum

EP

Abstract

A Zener diode includes a P+ anode, a poly mesh ring residing on the surface of the semiconductor substrate and surrounding the P+ anode, an N+ cathode residing opposite the poly mesh ring from the P+ anode, an outer spacer on an outer portion of the poly mesh ring adjacent the N+ cathode, and an inner spacer on an inner portion of the poly mesh ring adjacent to the P+ anode. The poly mesh ring may be a polysilicon layer residing upon a TEOS layer. The Zener diode may reside in a low dope N-well with a Zener junction including a N-well high region adjacent and below the P+ anode. The Zener diode may reside in a high dope N-well with a Zener junction including a P- structure formed in the high dope N-well in an upper portion of the semiconductor substrate and adjacent and surrounding the P+ anode.

Anmelder

Firma

NXP B.V.

Land

🇳🇱 Niederlande