Halbleitervorrichtung und Verfahren zu deren Herstellung

Details

Veröffentlichungs-Nr.

EP4718979

Anmeldetag

24. September 2025

Veröffentlichung

1. April 2026

Rechtsraum

EP

Abstract

The present disclosure provides a semiconductor device (100) and a manufacturing method therefor. The semiconductor device (100) includes a substrate (102), which is an n+-type doped silicon carbide substrate, an n-type doped silicon carbide substrate, or a p-type doped silicon carbide substrate; a buffer layer (104), arranged on the substrate (102), containing a doped gallium nitride, and having a breakdown electric field of greater than or equal to 80 V/µm; an active region (M), arranged on the buffer layer (104) and including a channel layer (106) containing an undoped or unintentionally doped gallium nitride, and a barrier layer (108) arranged on the channel layer (106) and containing an undoped or unintentionally doped aluminum gallium nitride; and a source (S), a gate (G), and a drain (D), arranged on the active region (M), where the gate (G) is arranged between the source (S) and the drain (D).

Anmelder

Firma

ULTRABAND TECHNOLOGIES, INC.

Land

🇹🇼 Taiwan