Verfahren zur Herstellung einer Ersten Kontaktschicht und einer Zweiten Kontaktschicht auf einem Leistungshalbleiterkörper und Leistungshalbleitervorrichtung

Details

Veröffentlichungs-Nr.

EP4718988

Anmeldetag

25. September 2024

Veröffentlichung

1. April 2026

Rechtsraum

EP

Abstract

A method for producing a first contact layer (5) and a second contact layer (6) on a power semiconductor body (2) is specified, comprising: - providing the power semiconductor body (2), comprising a substrate region (3) with a bottom surface and an epitaxial body region (4) with a top surface facing away from the bottom surface, - applying a first layer on the top surface and applying a second layer on the bottom surface, wherein the first layer comprises a first material comprising titanium, - incorporating a further material into the first layer, wherein the further material comprises phosphorus, and - annealing the power semiconductor body (2) with the first layer comprising the further material and the second layer for a predetermined time interval at a predetermined annealing temperature, such that the first layer and the further material form the first contact layer (5) being a titanium-phosphorus alloy and the second layer forms a second contact layer (6). Furthermore, a power semiconductor device (1) is specified.

Anmelder

Firma

Hitachi Energy Ltd

Land

🇨🇭 Schweiz