Einzelphotonen-Lawinendiode-Einheit und Elektronische Vorrichtung

Details

Veröffentlichungs-Nr.

EP4719002

Anmeldetag

29. September 2025

Veröffentlichung

1. April 2026

Rechtsraum

EP

Abstract

The application relates to the field of semiconductors, and particularly relates to a single-photon avalanche diode unit (20) and an electronic equipment. The single-photon avalanche diode unit includes at least one main junction (210) and a barrier region (211), wherein: a size of the main junction is smaller than a preset size; a polarity of the barrier region is the same as that of a first well region (2101), and the first well region is a well region of the main junction away from an electrode (207) of the single-photon avalanche diode unit in a depth direction; the barrier region is in the same layer as the first well region in the depth direction and is arranged around the first well region; and the barrier region extends outward to a hole conducting region (203) of the single-photon avalanche diode unit, and a polarity of the hole conducting region is the same as that of the first well region. The technical scheme can achieve high PDE while ensuring low DCR, thereby improving detection performance of the single-photon avalanche diode unit.

Anmelder

Firma

Suteng Innovation Technology Co., Ltd

Land

🇨🇳 China