Gehäuse für Integrierte Schaltung mit einem Material Hoher Wärmeleitfähigkeit in Dreidimensionalen Chipstapeln

Details

Veröffentlichungs-Nr.

EP4719038

Anmeldetag

16. Juli 2025

Veröffentlichung

1. April 2026

Rechtsraum

EP

Abstract

Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first die having a surface; a second die and a third die, the second die and the third die having a first surface and an opposing second surface, wherein the first surfaces of the second die and the third die are electrically coupled to the surface of the first die; a first material on the surface of the first die and around and between the second die and the third die, the first material having a non-planar surface; and a layer on and in physical contact with the non-planar surface of the first material and with the second surfaces of the second die and the third die, the layer including a second material having a thermal conductivity equal to or greater than 10 watt per meter-kelvin (W/m-K).

Anmelder

Firma

Intel Corporation

Land

🇺🇸 USA