Reflektierender Maskenrohling und Verfahren zur Herstellung eines Reflektierenden Maskenrohlings

Details

Veröffentlichungs-Nr.

EP4722806

Anmeldetag

2. Oktober 2025

Veröffentlichung

8. April 2026

Rechtsraum

EP

IPC

G03F1/24, G03F1/58(CHEN CHUN-LANG et al.)(NAKAGAWA MASANORI et al.)

Abstract

A reflective mask blank used in EUV lithography using EUV light as exposure light comprising at least a substrate 10; a multilayer reflective film 50 that is formed on the substrate 10 and reflects exposure light; and a multilayer film 200 containing tantalum (Ta). The multilayer film 200 has a TaN part 210, a TaO part 230, and a Ta part 220 provided between the TaN part 210 and the TaO part 230. A density of the Ta part 220 is higher than densities of the TaN part 210 and the TaO part 230. The density of the Ta part 220 is 13 g/cm<3> or more.

Anmelder

Firma

SHIN-ETSU CHEMICAL CO., LTD.

Land

🇯🇵 Japan