Speichervorrichtung und Datenleseverfahren dafür sowie Elektronische Vorrichtung
Anmelder: Beijing Superstring Academy of Memory Technology 🇨🇳
Details
- Veröffentlichungs-Nr.
- EP4723118
- Anmeldetag
- 27. September 2024
- Veröffentlichung
- 25. September 2025
- Rechtsraum
- EP
- IPC
- G11C16/08, G11C16/24
Abstract
The present disclosure relates to a storage apparatus and a data read method therefor, and an electronic device. The storage apparatus comprises a plurality of storage units (U); word lines (WL), which extend in a first direction and are connected to first electrodes (11) of storage units (U) in corresponding rows; bit lines (BL), which extend in a second direction and are connected to second electrodes (12) of storage units (U) in corresponding columns; and a read/write controller (2), which is connected to the word lines (WL) and the bit lines (BL), and is configured to set the voltage of each word line (WL) to a first initial voltage, set the voltage of each bit line (BL) to a second initial voltage, set the voltage of a selected bit line (BL) to a first selected voltage, connect the selected bit line (BL) to an induction amplifier (24), and set the voltage of a selected word line (WL) to a second selected voltage, such that the induction amplifier (24) outputs a data read signal on the basis of whether charge transfer has occurred on the bit line (BL), wherein the data read signal is used for representing data stored in the storage units (U).
Anmelder
- Firma
- Beijing Superstring Academy of Memory Technology
- Land
- 🇨🇳 China
Die Beijing Superstring Academy of Memory Technology ist eine 2020 gegründete chinesische Forschungseinrichtung mit Sitz in Peking, die neue Speicherzellarchitekturen für zukünftige DRAM-Technologien entwickelt. Das Patentportfolio konzentriert sich nahezu vollständig auf Halbleiter- und elektrische Bauelemente sowie Datenspeichertechnik. Die noch junge Patenttätigkeit stammt aus den Jahren 2021 bis 2025.
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