Verfahren zur Herstellung eines Galliumnitrid-Lichtemissionselements und Beleuchtungsvorrichtung

Details

Veröffentlichungs-Nr.

EP4723178

Anmeldetag

28. Mai 2024

Veröffentlichung

5. Dezember 2024

Rechtsraum

EP

IPC

H01L33/46, G03F7/20, H01L33/32

Abstract

The present invention provides a method for manufacturing a GaN light emitting element having adjustable directional characteristics. The method comprises: a step in which an n-type GaN layer (12), an MQW layer (14), and a p-type GaN layer (16) are epitaxially grown in sequence on a sapphire substrate (10) so as to form an epitaxial structure; a step in which a p-type electrode, a metal reflective film, a metal substrate, and a support substrate are formed on the p-type GaN layer (16); a step in which the epitaxial structure is inverted vertically; a step in which the sapphire substrate (10) is separated so as to expose the n-type GaN layer (12) in the surface; a step in which the n-type GaN layer (12) exposed in the surface is etched so as to adjust a resonator length between the surface of the metal reflective film and the surface of the n-type GaN layer (12); and a step in which an n-electrode (24) is formed.

Anmelder

Firmen

Nitride Semiconductors Co., Ltd.
NIKON CORPORATION

Land

🇯🇵 Japan

Fachgebiete