8-Förmige Induktivität mit Masseschienenstruktur

Details

Veröffentlichungs-Nr.

EP4723825

Anmeldetag

14. Juli 2023

Veröffentlichung

8. April 2026

Rechtsraum

EP

IPC

H01F17/00, H10W20/40, H10D1/20

Abstract

A semiconductor device (1a) includes a substrate (100); a first terminal (A) and a second terminal (B); and a conductor (210) arranged on the substrate (100) between the first terminal (A) and the second terminal (B) to constitute an inductor (IN) shaped for forming a first loop (L1) and a second loop (L2) arranged side-by-side along a first direction (D1). A crossing (C) of the conductor (210) with itself is present between the first loop (L1) and the second loop (L2). The first loop (L1) and the second loop (L2) define a first enclosed area (A1) and a second enclosed area (A2), respectively. A first ground bar (GB1) traverses the first loop (L1) and a second ground bar (GB2) traverses the second loop (L2).

Anmelder

Firma

MEDIATEK INC.

Land

🇹🇼 Taiwan