Bipolartransistorstrukturen mit Halbleiterschicht und Zugehörige Verfahren

Details

Veröffentlichungs-Nr.

EP4723826

Anmeldetag

3. April 2025

Veröffentlichung

8. April 2026

Rechtsraum

EP

Abstract

The disclosure provides bipolar transistor structures with a semiconductor film, and related methods. A structure of the disclosure includes an intrinsic base on a collector. The collector has a first doping type. A semiconductor film is on the intrinsic base and horizontally surrounds the intrinsic base. The semiconductor film horizontally encapsulates the intrinsic base. An emitter having the first doping type is on a first portion of the semiconductor film. An extrinsic base having a second doping type is on a second portion of the semiconductor film.

Anmelder

Firma

GlobalFoundries U.S. Inc.

Land

🇺🇸 USA