Vorrichtung zur Lichtdetektion, Bildsensor und Verfahren zur Lichtdetektion

Details

Veröffentlichungs-Nr.

EP4723839

Anmeldetag

7. Oktober 2024

Veröffentlichung

8. April 2026

Rechtsraum

EP

Abstract

A device (100; 200; 300; 400) for light detection comprises: an active layer (110; 210; 310; 410) configured to generate electrons in response to incident light; a silicon layer (120; 220; 320; 420) comprising a diode arrangement (122) configured for collection of the electrons generated by the active layer (110; 210; 310; 410); and an interface layer (140; 240; 340; 440) arranged between the active layer (110; 210; 310; 410) and the silicon layer (120; 220; 320; 420), wherein the interface layer (140; 240; 340; 440) is configured to provide an alignment of a conduction band of electrons between an energy level of the active layer (110; 210; 310; 410) and an energy level of the silicon layer (120; 220; 320; 420) for facilitating transport of the generated electrons from the active layer (110; 210; 310; 410) to the silicon layer (120; 220; 320; 420).

Anmelder

Firma

Imec VZW

Land

🇧🇪 Belgien