Sensor

Details

Veröffentlichungs-Nr.

EP4727152

Anmeldetag

8. Oktober 2024

Veröffentlichung

15. April 2026

Rechtsraum

EP

IPC

H04N25/76, G03F7/00, H10F39/00(ZHOU LIUFEI et al.)

Abstract

A sensor fabricated from a plurality of layers on a semiconductor wafer is described. The sensor comprises a plurality of sensor elements arranged in stitching blocks, wherein the plurality of stitching blocks comprise a plurality of vertically arranged control lines running from a bottom edge of the stitching block in the direction of an oppositely disposed top edge of the stitching block. One of the plurality of vertically arranged control lines terminates between the bottom edge and the top edge and the other ones of the plurality of vertically arranged control lines run from the bottom edge to the top edge and have a swerve at one of the bottom edge or the top edge, such that ones of the plurality of vertically arranged control lines in a first one of the plurality of stitching blocks connect to a displaced one of the vertical lines in a second abutting one of the plurality of stitching blocks. The plurality of stitching blocks further comprise at least one vertically arranged read-out line running from the bottom edge to the top edge, wherein the at least one vertically arranged read-out line in the first one of the plurality of stitching blocks connects to the at least one vertically arranged read-out line in the second abutting one of the plurality of stitching blocks. The plurality of stitching blocks further comprises a plurality of horizontally arranged control lines, running from a right-hand edge to an oppositely disposed left hand edge and being connected to ones of the plurality of vertically arranged control lines.

Anmelder

Firma

IMASENIC ADVANCED IMAGING, S.L.

Land

🇪🇸 Spanien

Fachgebiete