Doppelantifuse-Vorrichtungen und Speicherstrukturen mit Doppelantifuse-Vorrichtungen

Details

Veröffentlichungs-Nr.

EP4727281

Anmeldetag

3. April 2025

Veröffentlichung

15. April 2026

Rechtsraum

EP

Abstract

Disclosed is a dual-antifuse (DAF) device with two electrically isolated antifuses. The DAF device includes a gate structure including a dielectric layer lining a recess in a semiconductor layer between first and second conductive regions and a conductor layer on the dielectric layer. A gate cut isolation structure extends through the conductor layer, dividing the conductor layer into first and second conductor sections. As a result, the device includes a first antifuse (i.e., the first conductor section, the first conductive region, and the dielectric layer therebetween) and a second antifuse (i.e., a second conductor section, the second conductive region, and the dielectric layer therebetween), which is isolated from the first antifuse. Thus, the two antifuses are independently programable. Also disclosed herein are memory structure embodiments, which include DAF devices (either with or without electrically isolated antifuses) integrated into the cells of an array and which are configured for improved reliability.

Anmelder

Firma

GlobalFoundries U.S. Inc.

Land

🇺🇸 USA