Verfahren zur Herstellung eines Transistors mit Hoher Elektronenmobilität

Details

Veröffentlichungs-Nr.

EP4727285

Anmeldetag

7. Oktober 2025

Veröffentlichung

15. April 2026

Rechtsraum

EP

Abstract

The present disclosure provides a manufacturing method for a high electron mobility transistor, and the method includes the following steps: providing a semiconductor substrate (100); forming a p-type layer (P) above the semiconductor substrate (100); forming a protection layer (200A) at a position that is above the p-type layer (P) and that corresponds to a gate opening (202); forming a cover layer (112) above the p-type layer (P) and around the protection layer (200A), and removing the protection layer (200A) to form the gate opening (202), where a material of the cover layer (112) is undoped or un-intentionally doped gallium nitride or aluminum gallium nitride. Compared with the previous technology, the manufacturing method simplifies an overall process, further reduces a technical threshold, and can separately control and obtain good threshold voltage (Vth) and good conductive impedance (Rds (ON)), so that a product yield can be effectively improved.

Anmelder

Firma

ULTRABAND TECHNOLOGIES, INC.

Land

🇹🇼 Taiwan