Verfahren zur Herstellung von Einkristall-Kupferdünnschichten mit Nichtlinearem Hall-Effekt und Lochträger-Dominantem Transport

Details

Veröffentlichungs-Nr.

EP4727322

Anmeldetag

7. Juni 2024

Veröffentlichung

19. Dezember 2024

Rechtsraum

EP

Abstract

The present invention relates to a single crystalline copper thin film and a single crystalline copper thin film semiconductor, which utilize a phenomenon in which holes, rather than electrons, become carriers when a grain boundary (GB) is removed from a copper thin film having a thickness of 200 nm or less. More specifically, the present invention relates to a copper thin film and a single crystalline copper thin film semiconductor, of which electrical properties change to resemble those of a p-type semiconductor under certain conditions. In the single crystalline thin film having a suppressed grain boundary, according to the present invention, a single crystalline copper thin film having a nonlinear hall effect and a hole carrier dominant transport phenomenon includes a single crystalline copper thin film having a thickness of 200 nm or less, wherein the grain boundary is suppressed.

Anmelder

Firma

Pusan National University Industry-University Cooperation Foundation

Land

🇰🇷 Südkorea