Verfahren zur Herstellung einer Photonischen Integrierten Schaltung (pic) mit einem Lithiumniobat-Wellenleiter

Details

Veröffentlichungs-Nr.

EP4737960

Anmeldetag

29. Oktober 2024

Veröffentlichung

6. Mai 2026

Rechtsraum

EP

Abstract

Method of manufacturing a photonic integrated circuit with at least one lithium niobate waveguide comprising the following steps : i) providing a lithium niobate-on-insulator (LNOI) stacking, said stacking comprising a silicon (Si) substrate, a first silicon dioxide (SiOz) layer, a lithium niobate (LiNbO<3>) layer, and a cladding dielectric layer, wherein said lithium niobate layer comprises said lithium niobate waveguide, ii) applying a first photoresist mask on said cladding dielectric layer and creating at least one opening in said first photoresist mask by a photolithography process, iii) implementing a first etching step by Reactive-ion etching (RIE) through said at least one opening, thereby creating at least one cavity across all the thickness of said cladding dielectric layer, said lithium niobate layer and said first silicon dioxide layer, iv) implementing a second etching step by Deep Reactive-ion etching (DRIE) through at least part of said at least one opening, whereby at least part of said at least one cavity is extended further through the silicon substrate along a predetermined depth of at least 100 micrometres.

Anmelder

Firma

CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement

Land

🇨🇭 Schweiz