Vereinheitlichte Halbleiterbauelemente mit Prozessor und Heterogenen Speichern und Verfahren zur Herstellung davon

Details

Veröffentlichungs-Nr.

EP4739027

Anmeldetag

11. September 2019

Veröffentlichung

6. Mai 2026

Rechtsraum

EP

Abstract

Embodiments of semiconductor devices and fabrication methods thereof are disclosed. In an example, a semiconductor device includes NAND memory cells and a first bonding layer including first bonding contacts. The semiconductor device also includes a second semiconductor structure including DRAM cells and a second bonding layer including second bonding contacts. The semiconductor device also includes a third semiconductor structure including a processor, SRAM cells, and a third bonding layer including third bonding contacts. The semiconductor device further includes a first bonding interface between the first and third bonding layers, and a second bonding interface between the second and third bonding layers. The first bonding contacts are in contact with a first set of the third bonding contacts at the first bonding interface. The second bonding contacts are in contact with a second set of the third bonding contacts at the second bonding interface. The first and second bonding interfaces are in a same plane.

Anmelder

Firma

Yangtze Memory Technologies Co., Ltd.

Land

🇨🇳 China