Dünnfilmtransistor, Verfahren zu Seiner Herstellung und Anzeigevorrichtung, die Diesen Enthält

Details

Veröffentlichungs-Nr.

EP4739028

Anmeldetag

7. August 2025

Veröffentlichung

6. Mai 2026

Rechtsraum

EP

IPC

(YAMAZAKI SHUNPEI et al.)

Abstract

The present disclosure provides a thin film transistor comprising a gate electrode, an active layer, a source electrode, and a drain electrode, wherein the active layer includes a first channel part overlapping the source electrode, a second channel part overlapping the drain electrode, and a connection part connecting the first channel part and the second channel part, and the connection part is a conductorized region. Additionally, a manufacturing method of the thin film transistor and a display apparatus including the thin film transistor mentioned above are disclosed.

Anmelder

Firma

LG Display Co., Ltd.

Land

🇰🇷 Südkorea