Halbleitergehäuseanordnung und Herstellungsverfahren

EP4739083 6. Mai 2026

Anmelder: Changxin Memory Technologies, Inc. 🇨🇳

Details

Veröffentlichungs-Nr.
EP4739083
Anmeldetag
8. August 2022
Veröffentlichung
6. Mai 2026
Rechtsraum
EP
Offizieller Volltext

Abstract

Disclosed in the embodiments of the disclosure are a semiconductor package assembly and a manufacturing method. The semiconductor package assembly includes: a base plate, having a first surface; a chip stacking structure, located on the base plate, where the chip stacking structure includes a plurality of chips sequently stacked in a direction perpendicular to the base plate, and is electrically connected to the first surface of the base plate; an interposer, located on the chip stacking structure and having a first interconnection surface, where the first interconnection surface has a first interconnection region and a second interconnection region, and the first interconnection region is electrically connected to the base plate; and a molding compound, sealing the chip stacking structure, the interposer and the first surface of the base plate. The first interconnection region is not sealed by the molding compound, and the second interconnection region is sealed by the molding compound. There is a preset height between a top surface of the molding compound on the second interconnection region and the first interconnection region.

Anmelder

Firma
Changxin Memory Technologies, Inc.
Land
🇨🇳 China
🇨🇳 Changxin Memory Technologies

Chinesischer Halbleiterhersteller mit Sitz in Hefei, spezialisiert auf DRAM-Speicherchips.

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