Plasmaätzverfahren

Details

Veröffentlichungs-Nr.

EP4742297

Anmeldetag

2. Juni 2025

Veröffentlichung

13. Mai 2026

Rechtsraum

EP

IPC

H01J37/32(SPTS TECHNOLOGIES LTD et al.)(WOOD ALEX HUW et al.)

Abstract

There is provided a method of inductively coupled plasma etching an additive-containing aluminium nitride film, wherein the additive is selected from scandium, yttrium and erbium. The method comprises placing a workpiece upon a platen assembly within a plasma etch chamber, the workpiece comprising a substrate having the additive-containing aluminium nitride film deposited thereon and a photoresist mask disposed upon the film. The method further comprises powering the plasma etch chamber with an RF power supply, applying a bias power to the platen assembly, and bulk etching the additive-containing aluminium nitride film through the photoresist mask using a switched process by repeatedly alternating between the steps of (i) plasma etching the film by feeding a chlorinated etching gas and an inert diluent gas to the plasma etch chamber at substantially equal flow rates at a target chamber pressure, and (ii) plasma etching the film using the same chlorinated etching gas and inert diluent gas, at the same target chamber pressure, wherein the flow rate of the inert diluent gas is at least four times the flow rate of the chlorinated etching gas.

Anmelder

Firma

SPTS Technologies Limited

Land

🇬🇧 Großbritannien

Fachgebiete