Widerstand für Iii-V-Halbleiteranordnung

Details

Veröffentlichungs-Nr.

EP4750246

Anmeldetag

9. Mai 2025

Veröffentlichung

27. Mai 2026

Rechtsraum

EP

Abstract

A resistor including a first current transport level, a second current transport level, and a vertical interconnect resistor that couples the first and second current transport levels. The vertical interconnect resistor includes a doped conductive layer including one of indium gallium nitride (InGaN) and a doped polysilicon. The first and second current levels may include a number of current level islands that can be coupled in a lateral serpentine fashion and a vertical serpentine fashion to control a length and resistance value of the resistor. The resistor can be employed with III-V semiconductor devices and takes up less areal space than current resistors.

Anmelder

Firma

GlobalFoundries U.S. Inc.

Land

🇺🇸 USA