Vertikale Heterojunction-Bipolartranzistoren mit Verbesserten Kollektorkontakte

Details

Veröffentlichungs-Nr.

EP4750247

Anmeldetag

9. Mai 2025

Veröffentlichung

27. Mai 2026

Rechtsraum

EP

Abstract

The present disclosure relates to vertical heterojunction bipolar transistors (10) and methods of manufacturing. The structure includes: a sub-collector region (14); a collector region (12, 26) over the sub-collector region, the collector region having a first semiconductor material (12) comprising polysilicon material (12a) and single crystalline semiconductor material (12b) which is over the sub-collector region, and a second semiconductor material (26) on the single crystalline semiconductor material (12b); STI regions (16) under the polysilicon first semiconductor material (12a); diffusion regions (22) in the polysilicon first semiconductor material (12a); a base region (30) over the collector region (12, 26); and an emitter region (32) over the base region (30).

Anmelder

Firma

GlobalFoundries U.S. Inc.

Land

🇺🇸 USA