Lateral Diffundierter Feldeffekttransistor mit Kanal im Rippenbereich und Drain-Erweiterungsbereich im Planaren Bereich

Details

Veröffentlichungs-Nr.

EP4750249

Anmeldetag

9. Mai 2025

Veröffentlichung

27. Mai 2026

Rechtsraum

EP

Abstract

A laterally diffused field effect transistor (LDFET) and a related method are disclosed. The LDFET includes a substrate having a fin region and a planar region adjacent to the fin region. The LDFET also includes a source region in the fin region, a drain region in the planar region, a channel gate over the fin region and the planar region, and a drain extension region in the planar region between the source region and the drain region. The use of a substrate with a fin region for the source region and the channel of the channel gate and a planar region for the drain region and the drain extension region provides many of the benefits of both types of substrates for the LDFET.

Anmelder

Firma

GlobalFoundries U.S. Inc.

Land

🇺🇸 USA