Halbleiterbauelement mit einem Ersten und einem Zweiten Halbleitersubstratabschnitt

Details

Veröffentlichungs-Nr.

EP4750263

Anmeldetag

21. November 2024

Veröffentlichung

27. Mai 2026

Rechtsraum

EP

IPC

H10D89/60, H01L23/60

Abstract

A semiconductor device (100) is proposed. The semiconductor device includes a semiconductor substrate (102) including at least a first semiconductor substrate portion (1021) and a second semiconductor substrate portion (1022) separated from one another by a first part (1041) of an intermediate dielectric structure (104) along a first lateral direction (x1). The semiconductor device (100) further includes a patterned first metal layer (106) over a first surface (1081) of the semiconductor substrate (102), wherein a first part (1061) of the patterned first metal layer (106) electrically connects the first and second semiconductor substrate portions (1021, 1022) at the first surface (1081). Each of the first and second semiconductor substrate portions (1021, 1022) includes a main portion (1023) adjoining the first surface (1081) and an auxiliary portion (1024) adjoining a second surface (1082) opposite to the first surface (1081), and, with respect to each of the first and second semiconductor substrate portions (1021, 1022), a width (w12, w22) of the auxiliary portion (1024) along the first lateral direction (x1) is larger than a width (w11, w21) of the main portion (1023) along the first lateral direction (x1).

Anmelder

Firma

Infineon Technologies AG

Land

🇩🇪 Deutschland