Halbleiterbauelement, Elektronische Vorrichtung und System

Details

Veröffentlichungs-Nr.

EP4750303

Anmeldetag

20. November 2025

Veröffentlichung

27. Mai 2026

Rechtsraum

EP

Abstract

To provide a semiconductor device, an electronic device, and a system that are useful in a power device or the like and have superior electrical characteristics. A semiconductor device including a laminated structure in which a second semiconductor layer having a same crystal structure as a first semiconductor layer constituted of a crystalline oxide containing germanium or a mixed crystal of germanium as a main component is laminated directly or via another layer on the first semiconductor layer, the semiconductor device further including a Schottky electrode forming a Schottky junction with the second semiconductor layer and an ohmic electrode forming an ohmic junction with the first semiconductor layer, the semiconductor device being used and applied to, for example, a power device.

Anmelder

Firma

Patentix Inc.

Land

🇯🇵 Japan