Metallsputtertarget, Metallsputtertargetstruktur, Verfahren zur Herstellung eines Films damit und Verfahren zur Herstellung eines Metallsputtertargets

Details

Veröffentlichungs-Nr.

EP4752256

Anmeldetag

15. August 2024

Veröffentlichung

20. Februar 2025

Rechtsraum

EP

IPC

C23C14/34

Abstract

A metal sputtering target includes a metal having a body-centered cubic structure or a face-centered cubic structure. In the metal sputtering target, when a cross section perpendicular to a sputtering surface of the metal sputtering target is observed using an electron backscatter diffraction method to analyze crystal orientations in a normal direction (ND direction) of the sputtering surface, the proportion, relative to all measurement points, of measurement points having a plane orientation within 15° from the plane orientation with the highest intensity in an inverse pole figure space obtained from all the measurement points is 35% or more by area, and when a crystal orientation distribution function of the metal sputtering target is represented by Euler angles (φ1, Φ, φ2), which express a crystal orientation, in orientation groups of φ1: k° (0 ≤ k ≤ 90), Φ: x° (0 ≤ x ≤ 90), and φ2: y° (0 ≤ y ≤ 90), for all combinations of (x, y) for which the average value of orientation density in the range of 0 ≤ k ≤ 90 is 1.2 or more, the coefficient of variation of the average value is 0.5 or less.

Anmelder

Firma

Tosoh Corporation

Land

🇯🇵 Japan