Versorgungssteuerungsschaltung und Entsprechende Vorrichtung

EP4752671 3. Juni 2026

Anmelder: STMicroelectronics International N.V. 🇨🇭

Details

Veröffentlichungs-Nr.
EP4752671
Anmeldetag
12. November 2025
Veröffentlichung
3. Juni 2026
Rechtsraum
EP
IPC
G05F1/575, G11C5/14, H02M3/07
Offizieller Volltext

Abstract

A circuit configured to supply a load at an output node (vout) comprises driver circuitry including voltage boost capacitive circuitry (C<1A>, C<1B>, C<2A>, C<2B>) configured to apply to the control terminals (B<1>, C<1>, B<2>, C<2>) of one or more driver transistors (M<DPV_1A>, M<CASC_2A>, M<DRV_1B>, M<CASC_2B>) a voltage-pumped (100B, vbl_boost_var) replica of the comparison signal (COMP_OUT) between a reference voltage and a voltage that is a function of the output voltage (vout). Voltage refresh transistor circuitry (M<1A>, M<2A>, M<1B>, M<2B>) coupled to the voltage boost capacitive circuitry (C<1A>, C<1B>, C<2A>, C<2B>) is configured to transfer thereon the voltage-pumped (100B, vbl_boost_var) replica of the comparison signal (COMP_OUT). The driver circuitry is controllably (PA_LV, PB_LV) switchable between a first mode of operation during which the current flow path therethrough is conductive or non-conductive in response to the voltage-pumped (100B, vbl_boost_var) replica of the comparison signal (COMP_OUT) while the voltage refresh transistor circuitry (M<1A>, M<2A>, M<1B>, M<2B>) is de-activated, and a second mode of operation during which the voltage refresh transistor circuitry (M<1A>, M<2A>, M<1B>, M<2B>) is activated and the current flow path through the driver circuitry (M<DRV_1A>, M<CASC_2A>, M<DRV_1B>, M<CASC_2B>) is non-conductive. The circuit comprises variable boosted voltage generation circuitry (1000, 200, 202, 204) sensitive to a supply voltage at a supply node and configured to produce a variable boosted voltage (vbl_boost_var) wherein the variable boosted voltage generation circuitry (200, 202) is configured to increase the variable boosted voltage (vbl_boost_var) in response to a decrease of the supply voltage at the supply node

Anmelder

Firma
STMicroelectronics International N.V.
Land
🇨🇭 Schweiz
🇨🇭 STMicroelectronics International

Schweizer Gesellschaft des Halbleiterkonzerns STMicroelectronics, die Chips und Sensoren für Automobiltechnik, Industrie und Unterhaltungselektronik entwickelt.

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