Ätzflüssigkeit und Herstellungsverfahren für Halbleiterbauelement damit
Anmelder: MITSUBISHI GAS CHEMICAL COMPANY, INC. 🇯🇵
Details
- Veröffentlichungs-Nr.
- EP4752932
- Anmeldetag
- 23. Juli 2024
- Veröffentlichung
- 30. Januar 2025
- Rechtsraum
- EP
- IPC
- H01L21/306, C23F1/18
Abstract
The present invention relates to: an etching liquid that makes it possible to form a favorable etched surface while controlling how much of the surface of a copper-containing metal layer is etched; and a production method for a semiconductor device that uses the etching liquid. This etching liquid is for etching the surface of a copper-containing metal layer and is characterized by including, relative to the total amount of the etching liquid, (A) more than 0.1 but no more than 0.5 mass% of hydrogen peroxide, (B) 0.01 to 20 mass% of an organic acid that has a lowest acid dissociation constant pKa of at least 2.0, (C) 0.010 to 0.3 mass% of a nitrogen-containing heteromonocyclic compound, and (D) water, the inorganic acid content being less than 0.1 mass%.
Anmelder
- Firma
- MITSUBISHI GAS CHEMICAL COMPANY, INC.
- Land
- 🇯🇵 Japan
Japanisches Chemieunternehmen der Mitsubishi-Gruppe mit Fokus auf technische Kunststoffe, Methanol und Spezialchemikalien. Der Konzern beliefert unter anderem die Elektronik- und Verpackungsindustrie.
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