Verfahren zur Herstellung einer Halbleiterstruktur

Details

Veröffentlichungs-Nr.

EP4753399

Anmeldetag

27. November 2024

Veröffentlichung

3. Juni 2026

Rechtsraum

EP

IPC

H10D30/01, H10D30/62

Abstract

A method for producing a semiconductor structure (100) is provided. The method comprises: providing (12) a semiconductor fin (110) on a substrate (102), the semiconductor fin (110) comprising a first side surface (111), a second side surface (112) opposing the first side surface (111), and a top surface (113), wherein a mask (120) covers the top surface (113) of the semiconductor fin (110); exposing (14) a portion (114) of the top surface (113) of the semiconductor fin (110) by removing (15) a portion (124) of the mask (120), the exposed portion (114) of the top surface (113) and the first side surface (111) forming an exposed top corner (130) of the semiconductor fin (110); rounding (16) the exposed top corner (130) of the semiconductor fin (110) by oxidizing (17) the exposed portion (114) of the top surface (113) and the first side surface (111).

Anmelder

Firma

Imec VZW

Land

🇧🇪 Belgien

Fachgebiete