Verfahren zur Herstellung einer Halbleiterstruktur

Details

Veröffentlichungs-Nr.

EP4753403

Anmeldetag

27. November 2024

Veröffentlichung

3. Juni 2026

Rechtsraum

EP

Abstract

According to an aspect of the present inventive concept there is provided a method (1000) for fabricating a semiconductor structure (100), the method comprising: providing (1100) a substrate (110); providing (1200), on top of the substrate (110), a multi-layer stack (200) comprising, sacrificial layers (211, 212, 213, 214, 215) of a first type, sacrificial layers (221, 222, 223) of a second type, and first, second, and third channel layers (201, 202, 203); forming (1300) a first and second ridge (130, 140) from the multi-layer stack (200); and for the first ridge (130): removing (1400) the sacrificial layers (221, 222, 223) of the second type by selective etching, oxidizing (1500) the sacrificial layers (211, 212, 213, 214, 215) of the first type, and removing (1600) the second channel layer (202) by selective etching, wherein the oxidized sacrificial layers (131, 133, 135, 137, 139) protect the substrate (110) and the first and third channel layers (201, 203) from the selective etching step used to remove the second channel layer (202).

Anmelder

Firma

Imec VZW

Land

🇧🇪 Belgien