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Details

Veröffentlichungs-Nr.

EP4753422

Anmeldetag

24. November 2016

Veröffentlichung

3. Juni 2026

Rechtsraum

EP

IPC

H10K59/121

Abstract

A thin film transistor substrate includes a first thin film transistor disposed having a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode and a first drain electrode; a first gate insulating layer between the polycrystalline semiconductor layer and the first gate electrode; a second thin film transistor disposed having an oxide semiconductor layer on the first gate electrode, a second gate electrode on the oxide semiconductor layer, a second source electrode and a second drain electrode; an intermediate insulating layer disposed on the first gate electrode and under the oxide semiconductor layer; and a second gate insulating layer on the intermediate insulating layer and under the first source electrode, the first drain electrode and the second gate electrode.

Anmelder

Firma

LG Display Co., Ltd.

Land

🇰🇷 Südkorea