Siliciumcarbidhalbleiterbauelement und Herstellungsverfahren dafür

Details

Veröffentlichungs-Nr.

EP4757530

Anmeldetag

31. Mai 2024

Veröffentlichung

13. Februar 2025

Rechtsraum

EP

Abstract

A silicon carbide semiconductor device includes a semiconductor substrate SB made of 4H-SiC, a collector region CR formed in the semiconductor substrate SB, a contact layer CL in contact with the collector region CR and including a silicide region SCR and a non-silicide region NSCR, and a collector electrode CE in contact with the contact layer CL. A silicide layer SC having an upper surface and a lower surface is formed in the silicide region SCR, an altered layer AL made of 3C-SiC is interposed between the upper surface of the silicide layer SC and the collector region CR, and the lower surface of the silicide layer SC is in contact with the collector electrode CE.

Anmelder

Firma

Hitachi, Ltd.

Land

🇯🇵 Japan