Thermoelektrische Vorrichtung
Anmelder: Universitat Politècnica De Catalunya 🇪🇸
Details
- Veröffentlichungs-Nr.
- EP4757562
- Anmeldetag
- 5. Dezember 2024
- Veröffentlichung
- 10. Juni 2026
- Rechtsraum
- EP
Abstract
The present disclosure relates to a thermoelectric device comprising: a type n semiconductor and a type p semiconductor, the type n semiconductor and the type p semiconductor having two different contact portions, four conductive layers, and three metallic elements, wherein each of the two contact portions of the type n semiconductor are in contact with a first conductive layer and a second conductive layer, each of the two contact portions of the type p semiconductor are in contact with a third conductive layer and a fourth conductive layer, a first metallic element is in contact with the first conductive layer and the third conductive layer, the first conductive layer being in contact with the type n semiconductor, the third conductive layer being in contact with the type p semiconductor, a second metallic element is in contact with the second conductive layer, the second conductive layer being in contact with the type n semiconductor, and a third metallic element is in contact with the fourth conductive layer, the fourth conductive layer being in contact with the type p semiconductor.
Anmelder
- Firma
- Universitat Politècnica De Catalunya
- Land
- 🇪🇸 Spanien
Die Universitat Politècnica de Catalunya ist eine technische Universität in Barcelona, Spanien, mit breitem ingenieurwissenschaftlichem Fokus. Das Patentportfolio aus der universitären Forschung verteilt sich auf Medizintechnik, Mess- und Prüftechnik, Software sowie Verfahrens- und Werkstofftechnik. Anmeldungen laufen durchgehend seit 2000.
367 Patente in unserer Datenbank