Thermoelektrische Vorrichtung

Details

Veröffentlichungs-Nr.

EP4757562

Anmeldetag

5. Dezember 2024

Veröffentlichung

10. Juni 2026

Rechtsraum

EP

Abstract

The present disclosure relates to a thermoelectric device comprising: a type n semiconductor and a type p semiconductor, the type n semiconductor and the type p semiconductor having two different contact portions, four conductive layers, and three metallic elements, wherein each of the two contact portions of the type n semiconductor are in contact with a first conductive layer and a second conductive layer, each of the two contact portions of the type p semiconductor are in contact with a third conductive layer and a fourth conductive layer, a first metallic element is in contact with the first conductive layer and the third conductive layer, the first conductive layer being in contact with the type n semiconductor, the third conductive layer being in contact with the type p semiconductor, a second metallic element is in contact with the second conductive layer, the second conductive layer being in contact with the type n semiconductor, and a third metallic element is in contact with the fourth conductive layer, the fourth conductive layer being in contact with the type p semiconductor.

Anmelder

Firma

Universitat Politècnica De Catalunya

Land

🇪🇸 Spanien