Verfahren zum Füllen eines Grabens mit Hohem Aspektverhältnis

Details

Veröffentlichungs-Nr.

EP4757572

Anmeldetag

24. November 2025

Veröffentlichung

10. Juni 2026

Rechtsraum

EP

IPC

H10W10/40

Abstract

A method is provided for filling a high aspect ratio trench extending into the upper surface of a semiconductor substrate (114), comprising :- a first filling phase which forms a conformal layer (134) ,-an etch back to recess the portion of the conformal layer (134) extending over the upper surface of the semiconductor substrate (114) and form a funnel-shaped opening at the top of the trench,-a second filling phase which forms a filling layer that fills the remainder of the trench including the funnel-shaped opening and extends over the upper surface of the semiconductor substrate,- a further etch back to recess the portion of the filling layer extending over the upper surface of the semiconductor substrate (114).

Anmelder

Firma

STMicroelectronics International N.V.

Land

🇨🇭 Schweiz