Verfahren zum Plasmaätzen

Details

Veröffentlichungs-Nr.

EP4760774

Anmeldetag

19. Juni 2025

Veröffentlichung

17. Juni 2026

Rechtsraum

EP

IPC

H01J37/32, H01L21/3065

Abstract

There is disclosed a method of plasma etching a workpiece. The method comprises the steps of: placing the workpiece upon a substrate support within a plasma chamber, wherein the workpiece comprises a SiC substrate; introducing SF<6>, O<2> and He process gases into the plasma chamber; plasma etching the SiC substrate to thereby reduce surface roughness of the SiC substrate by alternating between: (i) applying a bias RF power to the substrate support to generate a reactive-ion etching plasma in the plasma chamber, and etching the SiC substrate at a first plasma chamber pressure for a first period of time; and (ii) applying a source RF power to the plasma chamber to generate an inductively coupled plasma in the plasma chamber and applying a bias RF power to the substrate support, and etching the SiC substrate at a second plasma chamber pressure for a second period of time.

Anmelder

Firma

SPTS Technologies Limited

Land

🇬🇧 Großbritannien

Fachgebiete