Halbleiterstrukturen mit einer Leiterschicht und mehreren Isolationsschichten

Details

Veröffentlichungs-Nr.

EP4760784

Anmeldetag

24. Juni 2025

Veröffentlichung

17. Juni 2026

Rechtsraum

EP

Abstract

Semiconductor structures that include a conductor layer and multiple dielectric layers, as well as methods of forming such semiconductor structures. The structure comprises a first dielectric layer, a second dielectric layer, and a conductor layer including a first section and a second section between the first dielectric layer and the second dielectric layer. The structure further comprises a semiconductor layer including a first section that overlaps with the first section of the conductor layer and a second section that overlaps with the second section of the conductor layer, and a trench isolation region including a first portion laterally between the first section of the conductor layer and the second section of the conductor layer.

Anmelder

Firma

GlobalFoundries U.S. Inc.

Land

🇺🇸 USA