Verfahren zur Herstellung eines Vertikalen Jfet

Details

Veröffentlichungs-Nr.

EP4761502

Anmeldetag

13. Dezember 2024

Veröffentlichung

17. Juni 2026

Rechtsraum

EP

Abstract

Disclosed is a method, The method includes: forming a plurality of trenches (110) in a first surface (101) of a semiconductor body (100) such that the trenches (110) are separated from each other by semiconductor mesa regions (120); and forming a channel region (13) of a first doping type in each of the mesa regions (120). Forming the channel region (13) includes implanting first type do-pant atoms at least into a first sidewall (121) of the respective mesa region (120), and implanting the first type dopant atoms into the first sidewall (121) includes at least two implantation processes that are different from each other with regard to at least one process parameter.

Anmelder

Firma

Infineon Technologies Austria AG

Land

🇦🇹 Österreich