Verfahren zur Herstellung einer Halbleitervorrichtung

Details

Veröffentlichungs-Nr.

EP4761510

Anmeldetag

12. Dezember 2024

Veröffentlichung

17. Juni 2026

Rechtsraum

EP

Abstract

The present invention provides a method for forming a semiconductor device (100), comprising: providing a substrate (102) having a frontside (102a) and a backside (102b); forming a fin (104) on the frontside (102a), the fin (104) comprising a fin base (105), the fin (104) extending across a gate zone (150) and across a source/drain zone (160); forming gate spacers (125) in the gate zone (150), the gate spacers (125) comprising a second dielectric material (108b); forming an interlayer dielectric layer (166) in the source/drain zone (160), the interlayer dielectric layer (166) comprising a third dielectric material (108c); depositing a bottom dielectric layer (156), the bottom dielectric layer (156) comprising a fourth dielectric material (108d); wherein the second dielectric material (108b), the third dielectric material (108c), and the fourth dielectric material (108d) comprise different materials; removing the substrate (102), wherein a backside surface exposes the second dielectric material (108b), the third dielectric material (108c), and the fourth dielectric material (108d).

Anmelder

Firma

Imec VZW

Land

🇧🇪 Belgien