Elektrooptische Photonische Integrierte Dünnschichtschaltung und Zugehörige Herstellungsverfahren

Details

Veröffentlichungs-Nr.

EP4764676

Anmeldetag

20. Dezember 2024

Veröffentlichung

24. Juni 2026

Rechtsraum

EP

IPC

G02F1/03, G02F1/035, H01S5/026

Abstract

Photonic Integrated Circuit comprising a stacking of layers comprising:a substrate defining a plane and a stacking direction perpendicular to said plane,a buried oxide layer provided on top of said substrate,a patterned layer of electro-optic material comprising at least one optical waveguide of said electro-optic material, provided on top of said buried oxide layer,a first patterned metal layer comprising a first group of metallic structures, provided on top of said electro-optic material and/or said buried oxide layer,a dielectric cladding volume, provided on top of said buried oxide layer, said patterned layer of electro-optic material and said first patterned metal layer,a second patterned metal layer comprising a second group of metallic structures embedded in said dielectric cladding volume, wherein there is at least one electrical connection between at least two metallic structures from said first and second groups through at least one via,characterized in that said second patterned metal layer is provided at a distance along the stacking direction between 1 and 2.5 micrometres from said at least one optical waveguide.

Anmelder

Firma

CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement

Land

🇨🇭 Schweiz

Fachgebiete