Verfahren und Vorrichtung zur Bestimmung von Relativen Lateraldaten von Halbleiterstrukturen

Details

Veröffentlichungs-Nr.

EP4764702

Anmeldetag

20. Dezember 2024

Veröffentlichung

24. Juni 2026

Rechtsraum

EP

Abstract

The invention relates to a method (200) for determining relative lateral data of features of a semiconductor substrate, the method (200) being implemented by a device comprising: - an imaging system (11, 13, 14, 16) having a depth of field, - a spatial phase mask (17) positioned in the aperture stop of the imaging system or in a conjugate plane of the aperture stop and configured to modulate the optical transfer function of the imaging system, and - an image sensor (12), wherein the modulated optical transfer function is adapted to extend the depth of field of the imaging system, the method (200) comprising the following steps: - acquiring (202) an image of a scene comprising at least a first feature of the semiconductor substrate in a first plane and a second feature of the semiconductor substrate in a second plane, the planes being perpendicular to an optical axis of the imaging system and separated by a distance greater than the depth of field of the imaging system; - detecting (204) the first feature of the semiconductor substrate and the second feature of the semiconductor substrate; - determining (206) relative lateral data of the first feature and the second feature. The invention also relates to a device implementing such a method.

Anmelder

Firma

UNITY SEMICONDUCTOR

Land

🇫🇷 Frankreich