Leistungsmonitor für einen Silizium-Photonik-Basierten Laser

Details

Veröffentlichungs-Nr.

EP4765525

Anmeldetag

2. März 2022

Veröffentlichung

24. Juni 2026

Rechtsraum

EP

IPC

H01S5/0683

Abstract

A laser device based on silicon photonics with an in-cavity power monitor includes a gain chip (100) mounted on a silicon photonics substrate and configured to emit light in an active region bounded between a frontend facet (101) with low reflectivity and a backend facet (102) with anti-reflective characteristics. The laser device further includes a wavelength tuner (200) formed with waveguides (210) in the silicon photonics substrate optically coupled to the backend facet to receive light from the gain chip and configured to have a reflector (201) with high reflectivity to reflect the light in an extended cavity formed with the frontend facet through which a laser with a tuned wavelength and amplified power is outputted. Additionally, the laser device includes a photodiode (205) formed in the silicon photonics substrate and coupled to the waveguides in the extended cavity right in front of the reflector to measure power of light thereof.

Anmelder

Firma

Marvell Asia Pte Ltd

Land

🇸🇬 Singapur

Fachgebiete